N-Ch 150V Fast Switching MOSFETs

General Description Advanced Trench MOS Technology Low Gate Charge Low RDS(ON) 100 EAS Guaranteed Green Device Available Applications Load Switch LED Applications Networking Applications Quick Charger

文件：497.02 Kbytes 页数：4 Pages

FETEK

台湾东沅

MOSFET

Fetek

台湾东沅

N-Ch 150V Fast Switching MOSFETs

General Description ⚫ Advanced Trench MOS Technology ⚫ Low Gate Charge ⚫ Low RDS(ON) ⚫ 100 EAS Guaranteed ⚫ Green Device Available Applications ⚫ Load Switch ⚫ LED Applications ⚫ Networking Applications ⚫ Quick Charger

文件：499.62 Kbytes 页数：4 Pages

FETEK

台湾东沅

N-Channel Power MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V • Low gate charge (typical 220 nC) • Low Crss (typical 200 pF) • Fast switching • 1

文件：749.16 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Power MOSFET

文件：1.0998 Mbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司