HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ............................................................................... 500V ● rDS (ON) (MAX) ............................................................. 1.13Ω ● ID ........................................................................................

文件：50.93 Kbytes 页数：5 Pages

MITSUBISHI

三菱电机

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ............................................................................... 500V ● rDS (ON) (MAX) ............................................................. 1.13Ω ● ID ........................................................................................

文件：56.8 Kbytes 页数：5 Pages

POWEREX

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................600V ● rDS (ON) (MAX) .............................................................. 1.18Ω ● ID .......................................................................................

文件：56.81 Kbytes 页数：5 Pages

POWEREX

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.18Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：333.07 Kbytes 页数：2 Pages

ISC

无锡固电

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................600V ● rDS (ON) (MAX) .............................................................. 1.18Ω ● ID .......................................................................................

文件：50.87 Kbytes 页数：5 Pages

MITSUBISHI

三菱电机

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ............................................................................... 450V ● rDS (ON) (MAX) ............................................................. 0.92Ω ● ID ........................................................................................

文件：51.18 Kbytes 页数：5 Pages

MITSUBISHI

三菱电机

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.92Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：332.87 Kbytes 页数：2 Pages

ISC

无锡固电

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ............................................................................... 450V ● rDS (ON) (MAX) ............................................................. 0.92Ω ● ID ........................................................................................

文件：57.07 Kbytes 页数：5 Pages

POWEREX

Multilayer Ceramic Capacitors

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

文件：122.89 Kbytes 页数：12 Pages

TDK

东电化

MLCC with Dipped Radial Lead

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

文件：139.35 Kbytes 页数：11 Pages

TDK

东电化