FK1资料datasheet下载供应价格力特第3页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
FK10UM-10	文件：90.42 Kbytes Page：6 Pages	MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE ● VDSS ................................................................................500V ● rDS (ON) (MAX) .............................................................. 1.13Ω ● ID ....................................................................................... 文件：90.42 Kbytes 页数：6 Pages	RENESAS 瑞萨	RENESAS
FK10UM-10	文件：322.42 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.13Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con 文件：322.42 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
FK10UM-12	文件：52.21 Kbytes Page：5 Pages	HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● VDSS ................................................................................600V ● rDS (ON) (MAX) .............................................................. 1.18Ω ● ID ....................................................................................... 文件：52.21 Kbytes 页数：5 Pages	MITSUBISHI 三菱电机	MITSUBISHI
FK10UM-12	文件：58.17 Kbytes Page：5 Pages	HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● VDSS ................................................................................600V ● rDS (ON) (MAX) .............................................................. 1.18Ω ● ID ....................................................................................... 文件：58.17 Kbytes 页数：5 Pages	POWEREX	POWEREX
FK10UM-12	文件：90.69 Kbytes Page：6 Pages	MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE ● VDSS ................................................................................600V ● rDS (ON) (MAX) .............................................................. 1.18Ω ● ID ....................................................................................... 文件：90.69 Kbytes 页数：6 Pages	RENESAS 瑞萨	RENESAS
FK10UM-9	文件：52.78 Kbytes Page：5 Pages	HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● VDSS ................................................................................450V ● rDS (ON) (MAX) .............................................................. 0.92Ω ● ID ....................................................................................... 文件：52.78 Kbytes 页数：5 Pages	MITSUBISHI 三菱电机	MITSUBISHI
FK10UM-9	文件：58.73 Kbytes Page：5 Pages	HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● VDSS ................................................................................450V ● rDS (ON) (MAX) .............................................................. 0.92Ω ● ID ....................................................................................... 文件：58.73 Kbytes 页数：5 Pages	POWEREX	POWEREX
FK10UM-9	文件：323.09 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.92Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con 文件：323.09 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
FK10UM-9	文件：91.14 Kbytes Page：6 Pages	MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE ● VDSS ................................................................................450V ● rDS (ON) (MAX) .............................................................. 0.92Ω ● ID ....................................................................................... 文件：91.14 Kbytes 页数：6 Pages	RENESAS 瑞萨	RENESAS
FK10VS-10	文件：332.18 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.13Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con 文件：332.18 Kbytes 页数：2 Pages	ISC 无锡固电	ISC

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技术参数

精度：
±20%
额定电压：
400V
脚间距：
5mm
电容体直径：
10mm
电容体长度：
14mm
工作寿命：
8000hrs@105℃

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市亿智腾科技有限公司	FK18X7R2A102K	原厂原包	24+	原装	38560	原装进口现货,工厂客户可以放款。17377264928微信同	询价
深圳市明嘉莱科技有限公司	FK14X7R2A473KN020	TDK/东电化	25+	DIP	880000	明嘉莱只做原装正品现货	询价
谛辉(北京/上海/青岛 )电子科技有限公司	FK16KM-6	SANKEN	25+	标准封装	18000	原厂直接发货进口原装	询价
深圳市科芯源微电子有限公司	FK18X7R1H104KN006	TDK	25+	DIP2	16792	原装正品,假一罚十!	询价
深圳市恒创达实业有限公司	FK10KM-12	MIT进口原	17+	TO-220F	6200		询价
深圳市达恩科技有限公司	FK1252CW-038-TT5GP-50	AMPHENOL CORPORATION	24+	N/A	9507	原装原装原装	询价
深圳市能元时代电子有限公司	FK10KM-9	MITSUBI	23+	TO-220F	64369	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
深圳市拓亿芯电子有限公司	FK12-1V8DV	FABRIMEX	25+	DIPSIP	55000	原厂渠道原装正品假一赔十	询价
深圳市得捷芯城科技有限公司	FK1840001	DIODES(美台)	25+	SMD3225-4P	6895	正规渠道,免费送样。支持账期,BOM一站式配齐	询价
洪芯国际半导体（深圳）有限公司	FK18SM-14A	Renesas	26+	TO-220F	86720	全新原装进口现货价格优惠本公司承诺原装正品假一赔	询价

更多FK1供应商更新时间2026-1-17 12:00:00

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