带偏置电阻的 NPN 外延硅晶体管

带内置电阻的晶体管由于其减少的零件数量和简化的电路设计，可极大地节约空间和成本。 100 mA 输出电流处理能力\n 内置偏置电阻（R1 = 22 KΩ、R2 = 22 KΩ）;

ONSEMI

安森美半导体

NPN Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=22KΩ) • Complement to FJV4103R

文件：56.35 Kbytes 页数：4 Pages

Fairchild

仙童半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 200MW SOT23-3

ONSEMI

安森美半导体

P-Ch 30V Fast Switching MOSFETs

Description The FKBA3103 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBA3103 meet the RoHS and Green Product requirement , 100 EAS guaranteed with full function reliability approv

文件：501.58 Kbytes 页数：4 Pages

FETEK

台湾东沅

P-Ch 30V Fast Switching MOSFETs

Description The FKBB3103 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBB3103 meet the RoHS and Green Product requirement, 100 EAS guaranteed with full function reliability approve

文件：516.07 Kbytes 页数：4 Pages

FETEK

台湾东沅

P-Ch 30V Fast Switching MOSFETs

Description The FKD3103 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKD3103 meet the RoHS and Green Product requirement , 100 EAS guaranteed with full function reliability approved

文件：495.67 Kbytes 页数：4 Pages

FETEK

台湾东沅