52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

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FAIRCHILD

仙童半导体

52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

文件：71.39 Kbytes 页数：6 Pages

INTERSIL

High Performance Relative Humidity and Temperature Sensor

文件：819.36 Kbytes 页数：21 Pages

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瑞萨

High Performance Relative Humidity and Temperature Sensor

Features Humidity range: 0 to 100RH Humidity accuracy: ±1.5RH, typical (HS3101, 10 to 90RH, 25°C) Hydrophobic membrane, IP67 rating 14-bit resolution: 0.01RH, typical Independent programmable resolution settings: 8, 10, 12, 14 bits Fast RH response time: 1 second time constant, typical (w

文件：789.94 Kbytes 页数：21 Pages

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High Performance Relative Humidity and Temperature Sensor with Digital Output

Features ■ Humidity range: 0 to 100RH ■ Automotive grade, AEC-Q100 qualified, Grade 2, -40°C to +105°C ■ Industrial grade, JEDEC qualified, -40°C to +125°C ■ Digital I2C output with CRC checksum ■ RH accuracy: ±1.5RH, typical (HS4001) ■ 14-bit resolution: 0.04RH, typical ■ Independent pro

文件：1.19449 Mbytes 页数：27 Pages

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