场效应管 / 高压MOSFERs

First

福斯特

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Convertor and switching mode power supplies. FEATURES • VDSS(Min.)= 400V, ID= 6.5A •

文件：914.31 Kbytes 页数：6 Pages

KEC

KEC(Korea Electronics)

N-Channel MOSFET 400V, 6A, 0.85(ohm)

文件：840.27 Kbytes 页数：6 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：353.51 Kbytes 页数：2 Pages

ISC

无锡固电