FIR6N70BPG(T)数据表ic资料批发供应福斯特-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
FIR6N70BPG(T)	文件：300 bytes Page：1 Pages	功率MOS/高压功率MOS	First 福斯特	First
FIR6N70FG	文件：2.35971 Mbytes Page：8 Pages	700V N-Channel MOSFET 文件：2.35971 Mbytes 页数：8 Pages	FOSTER 福斯特半导体	FOSTER
FQA6N70	文件：563.21 Kbytes Page：8 Pages	700V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withsta 文件：563.21 Kbytes 页数：8 Pages	Fairchild 仙童半导体	Fairchild
FQAF6N70	文件：745.64 Kbytes Page：8 Pages	700V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 4.74A, 700V, RDS(on) = 1.5 Ω @VGS = 10 V • Low gate charge ( typical 30 nC) • Low Crss ( typical 15 pF) • Fast switching • 文件：745.64 Kbytes 页数：8 Pages	Fairchild 仙童半导体	Fairchild

更多FIR6N70BPG(T)供应商更新时间2025-11-4 10:06:00