700V N-Channel MOSFET

文件：2.35971 Mbytes 页数：8 Pages

FOSTER

福斯特半导体

功率MOS/高压功率MOS

First

福斯特

700V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withsta

文件：563.21 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

700V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 4.74A, 700V, RDS(on) = 1.5 Ω @VGS = 10 V • Low gate charge ( typical 30 nC) • Low Crss ( typical 15 pF) • Fast switching •

文件：745.64 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 4.74A@ TC=25℃ ·Drain Source Voltage- : VDSS=700V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：328.91 Kbytes 页数：2 Pages

ISC

无锡固电