FIR60N03PG

30V-Channel Mosfet

FQB60N03L

N-ChannelLogicLevelPWMOptimizedPowerMOSFET

FQB60N03L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.0135Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQD60N03L

N-ChannelLogicLevelMOSFETs30V,30A,0.023ohm

GeneralDescription ThisdeviceemploysadvancedMOSFETtechnologyandfeatureslowgatechargewhilemaintaininglowonresistance.Optimizedforswitchingapplications,thisdeviceimprovestheoverallefficiencyofDC/DCconvertersandallowsoperationtohigherswitchingfrequencies. F

FQD60N03L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=40.3A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.019Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQP60N03L

30VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •60A,30V.RDS(on)=0.0135Ω@VGS=10V •Lowgatecharge(typical18.5nC) •LowCrss(typical155pF) •Fa

FQPF60N03L

30VLOGICN-ChannelMOSFET

GE60N03

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GE60N03

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheGE60N03providethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsandsuitedforlowvoltageapplicationsuchas

GFP60N03

N-ChannelEnhancement-ModeMOSFET

Features •AdvancedTrenchProcessTechnology •HighDensityCellDesignforUltraLow On-Resistance •SpeciallyDesignedforLowVoltageDC/DC Converters •FastSwitchingforHighEfficiency