FIR2N60ALG(I版)数据表ic资料库存现货First-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
FIR2N60ALG(I版)	文件：300 bytes Page：1 Pages	功率MOS/高压功率MOS	First 福斯特	First
FIR2N60BTPG	文件：3.72386 Mbytes Page：7 Pages	Advanced N-Ch Power MOSFET 文件：3.72386 Mbytes 页数：7 Pages	FOSTER 福斯特半导体	FOSTER
FQB2N60	文件：580.92 Kbytes Page：9 Pages	600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs 文件：580.92 Kbytes 页数：9 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD2N60	文件：561.14 Kbytes Page：9 Pages	600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs 文件：561.14 Kbytes 页数：9 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

更多FIR2N60ALG(I版)供应商更新时间2025-10-12 14:02:00