N-Channel Power MOSFET

文件：8.63665 Mbytes 页数：10 Pages

FOSTER

福斯特半导体

功率MOS/高压功率MOS

First

福斯特

650V/20A Field Stop IGBT

Features 650V 20A,VCE(sat)(typ.) = 1.80 V@20A Field Stop IGBT Technology. 10μs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Benefits High Efficiency for Motor Control. Rugged Performance. Excellent Current Sharing in Parallel Operation

文件：1.38001 Mbytes 页数：9 Pages

LUGUANG

鲁光电子

650V/20A Field Stop IGBT

Features 650V 20A,VCE(sat)(typ.) = 1.80 V@20A Field Stop IGBT Technology. 10μs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Benefits High Efficiency for Motor Control. Rugged Performance. Excellent Current Sharing in Parallel Operation

文件：1.38025 Mbytes 页数：9 Pages

LUGUANG

鲁光电子

N-Channel Enhancement Mode Power MOSFET

Description The GC20N65F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：754.46 Kbytes 页数：6 Pages

GOFORD

谷峰半导体