丝印：GC20N65；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The GC20N65F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：754.46 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC20N65；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The GC20N65FA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.12265 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC20N65；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The GC20N65FD uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：795.14 Kbytes 页数：7 Pages

GOFORD

谷峰半导体

Multi-epi SJ mos

GOFORD

谷峰半导体

MOSFET

Power MOSFETs find widespread use across various applications due to their low ON resistance, making them particularly appealing. By minimizing power dissipation, they contribute to cost reduction, smaller form factors, and less cooling requirements, resulting in significant enhancements for electro

GOFORD

谷峰半导体

Multi-epi SJ mos

GOFORD

谷峰半导体