FIR1N60ALG技术资料参数批发采购福斯特-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
FIR1N60ALG	文件：6.05177 Mbytes Page：10 Pages	N-Channel Power MOSFET 文件：6.05177 Mbytes 页数：10 Pages	FOSTER 福斯特半导体	FOSTER
FIR1N60ALG	文件：300 bytes Page：1 Pages	功率MOS/高压功率MOS	First 福斯特	First
FKN1N60SA	文件：300.13 Kbytes Page：7 Pages	TRIAC (Silicon Bidirectional Thyristor) 文件：300.13 Kbytes 页数：7 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB1N60	文件：545.42 Kbytes Page：9 Pages	600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs 文件：545.42 Kbytes 页数：9 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD1N60	文件：543.8 Kbytes Page：9 Pages	600V N-Channel MOSFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energ 文件：543.8 Kbytes 页数：9 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

更多FIR1N60ALG供应商更新时间2025-10-10 11:00:00