丝印：FIR150N15ANF；Package：TO-247；N-Channel Enhancement Mode Power Mosfet

文件：4.80639 Mbytes 页数：7 Pages

FOSTER

福斯特半导体

功率MOS/中低压功率MOS

First

福斯特

PolarHT??HiPerFET Power MOSFET

Features ● International standard packages ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect Advantages ● Easy to mount ● Space savings ● High power density

文件：109.83 Kbytes 页数：5 Pages

IXYS

艾赛斯

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 150A@ TC=25℃ · Drain Source Voltage -VDSS= 150V(Min) · Static Drain-Source On-Resistance -RDS(on) = 13mΩ(Max)@VGS= 10V APPLICATIONS · Switching · Converters

文件：346.68 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFET Power MOSFETs

HiPerFET Power MOSFETs Single MOSFET Die Features • International standard packages • Low RDS(on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier App

文件：47.98 Kbytes 页数：2 Pages

IXYS

艾赛斯