IGBT Modules in ISOPLUS i4-PAC™

·Vces: 600V, 1200V & 1700V. Ic: 18A to 65A\n·NPT or NPT³ IGBT with low Vce(sat),low switching losses, square RBSOA, short circuit ruggedness, Positive temperature coeff. for easy parallelling, short tail current\n·HiPerFRED diodes with fast soft recovery\n·Package with insulating DCB base plate (250;

Littelfuse

力特

IGBT phaseleg

Features • NPT IGBT technology - low saturation voltage - positive temperature coeffcient for easy paralleling - fast switching • HiPerFRED™ diode - optimized fast and soft reverse recovery - low operating forward voltage - low leakage current • ISOPLUS i4-PAC™ pac

文件：306.72 Kbytes 页数：4 Pages

IXYS

艾赛斯

Package：i4-Pac™-5；包装：管件 类别：分立半导体产品 晶体管 - IGBT - 阵列 描述：IGBT H BRIDGE 600V 40A I4PAK5

IXYS

艾赛斯

HiPerFET Power MOSFETs -Boost Chopper Topology in ISOPLUS i4-PAC

文件：50.2 Kbytes 页数：2 Pages

IXYS

艾赛斯

These schottky barrier diodes are designed for high speed switching applications, circuit protection and voltage clamping

文件：218.84 Kbytes 页数：2 Pages

ETL

亚历电子

40A Glass Passivated Bridge Rectifier

Features • Glass passivated chip junction • Low reverse leakage current • Low power loss; high efficiency • Electrically isolated epoxy case for Max. heat dissipation • This series is UL recognized under component index, File number E194718 • RoHS Compliant

文件：148.25 Kbytes 页数：4 Pages

TAITRON