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FII30-06D

low saturation voltage

Features •NPTIGBT -lowsaturationvoltage -positivetemperaturecoefficientforeasyparalleling -fastswitching •HiPerFREDTMdiode -optimizedfastandsoftreverserecovery -lowoperatingforwardvoltage -lowleakagecurrent •ISOPLUSi4-PACTMpackage -iso

IXYS

IXYS Integrated Circuits Division

FII30-06D

包装:管件 封装/外壳:i4-Pac™-5 类别:分立半导体产品 晶体管 - IGBT - 阵列 描述:IGBT H BRIDGE 600V 30A I4PAK5

IXYS

IXYS Integrated Circuits Division

30-06-A

HERMETICALLYSEALEDCRYSTALCANRELAY

OENINDIA

OEN India Limited

30-06-D

HERMETICALLYSEALEDCRYSTALCANRELAY

OENINDIA

OEN India Limited

30-06-E

HERMETICALLYSEALEDCRYSTALCANRELAY

OENINDIA

OEN India Limited

30-06-G

HERMETICALLYSEALEDCRYSTALCANRELAY

OENINDIA

OEN India Limited

30-06-L

HERMETICALLYSEALEDCRYSTALCANRELAY

OENINDIA

OEN India Limited

DSEC30-06

HiPerFREDTMEpitaxialDiodewithcommoncathodeandsoftrecovery

Features •Internationalstandardpackage •Planarpassivatedchips •Veryshortrecoverytime •Extremelylowswitchinglosses •LowIRM-values •Softrecoverybehaviour •EpoxymeetsUL94V-0 Applications •Antiparalleldiodeforhighfrequencyswitchingdevices •

IXYS

IXYS Integrated Circuits Division

DSEC30-06A

HiPerFREDEpitaxialDiodewithcommoncathodeandsoftrecovery

Features ●Internationalstandardpackage ●Planarpassivatedchips ●Veryshortrecoverytime ●Extremelylowswitchinglosses ●LowIRM-values ●Softrecoverybehaviour ●EpoxymeetsUL94V-0 Applications ●Antiparalleldiodeforhighfrequencyswitchingdevices ●

IXYS

IXYS Integrated Circuits Division

DSEC30-06B

HiPerFREDTMEpitaxialDiodewithcommoncathodeandsoftrecovery

Features •Internationalstandardpackage •Planarpassivatedchips •Veryshortrecoverytime •Extremelylowswitchinglosses •LowIRM-values •Softrecoverybehaviour •EpoxymeetsUL94V-0 Applications •Antiparalleldiodeforhighfrequencyswitchingdevices •

IXYS

IXYS Integrated Circuits Division

DSEC30-06B

HighPerformanceFastRecoveryDiodeLowLossandSoftRecoveryCommonCathode

HiPerFRED LowLossandSoftRecoveryHighPerformanceFastRecoveryDiodeCommonCathode Features/Advantages: ●Planarpassivatedchips ●Verylowleakagecurrent ●Veryshortrecoverytime ●Improvedthermalbehaviour ●VerylowIrm-values ●Verysoftrecoverybehaviour ●Avalanchevol

IXYS

IXYS Integrated Circuits Division

DSEI30-06A

FastRecoveryEpitaxialDiode(FRED)

Features ●InternationalstandardpackageJEDECTO-247AD ●Planarpassivatedchips ●Veryshortrecoverytime ●Extremelylowswitchinglosses ●LowIRM-values ●Softrecoverybehavior ●EpoxymeetsUL94V-0 ●VersionARisolatedandULregisteredE153432 Applications ●Antiparalleldio

IXYS

IXYS Integrated Circuits Division

DSEI30-06A

UltrafastRectifier

FEATURES ·Guardingforovervoltageprotection ·Dualrectifierconstruction,positivecentertap ·Metalofsiliconrectifier,majoritycarrierconduction ·Lowforwardvoltage,highefficiency ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Uni

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

DSEP30-06A

UltrafastRectifier

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

DSEP30-06A

HiPerFREDEpitaxialDiodewithsoftrecovery

Features •Internationalstandardpackage •Planarpassivatedchips •Veryshortrecoverytime •Extremelylowswitchinglosses •LowIRM-values •Softrecoverybehaviour •EpoxymeetsUL94V-0 •Version..RisolatedandULregisteredE153432 Applications •Antiparalleldiodeforhighfr

IXYS

IXYS Integrated Circuits Division

DSEP30-06B

HiPerFREDEpitaxialDiodewithsoftrecovery

Features •Internationalstandardpackage •Planarpassivatedchips •Veryshortrecoverytime •Extremelylowswitchinglosses •LowIRM-values •Softrecoverybehaviour •EpoxymeetsUL94V-0 •Version..RisolatedandULregisteredE153432 Applications •Antiparalleldiodeforhighfr

IXYS

IXYS Integrated Circuits Division

DSEP30-06BR

HiPerFREDEpitaxialDiodewithsoftrecovery

Features •Internationalstandardpackage •Planarpassivatedchips •Veryshortrecoverytime •Extremelylowswitchinglosses •LowIRM-values •Softrecoverybehaviour •EpoxymeetsUL94V-0 •Version..RisolatedandULregisteredE153432 Applications •Antiparalleldiodeforhighfr

IXYS

IXYS Integrated Circuits Division

DSEP30-06BR

UltrafastRecoveryDiode

FEATURES ·Ultrafastrecoverytime ·Lowforwardvoltage,highefficiency ·100avalanchetested APPLICATIONS ·Switchingpowersupply ·Powerswitchingcircuits

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

DSEP30-06CR

HiPerDynFREDTMEpitaxialDiodewithsoftrecovery(ElectricallyIsolatedBackSurface)

Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowcathodetotabcapacitance(

IXYS

IXYS Integrated Circuits Division

FE30-06

3AFASTEFFICIENTRECTIFIER

FRONTIER

Frontier Electronics

产品属性

  • 产品编号:

    FII30-06D

  • 制造商:

    IXYS

  • 类别:

    分立半导体产品 > 晶体管 - IGBT - 阵列

  • 包装:

    管件

  • IGBT 类型:

    NPT

  • 配置:

    半桥

  • 不同 Vge、Ic 时 Vce(on)(最大值):

    2.4V @ 15V,20A

  • 输入:

    标准

  • NTC 热敏电阻:

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    i4-Pac™-5

  • 供应商器件封装:

    ISOPLUS i4-PAC™

  • 描述:

    IGBT H BRIDGE 600V 30A I4PAK5

供应商型号品牌批号封装库存备注价格
IXYS
23+
ISOPLUS
6000
15年原装正品企业
询价
IXYS
18+
NA
3000
进口原装正品优势供应QQ3171516190
询价
IXYS
18+
2173
公司大量全新正品 随时可以发货
询价
IXYS
1931+
N/A
18
加我qq或微信,了解更多详细信息,体验一站式购物
询价
IXYS
1809+
i4-PAC
326
就找我吧!--邀您体验愉快问购元件!
询价
IXYS
22+
NA
18
加我QQ或微信咨询更多详细信息,
询价
IXYS
2022+
MODULE
7300
原装现货
询价
IXYS/艾赛斯
21+ROHS
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IXYS
2022+
原厂原包装
6800
全新原装 支持表配单 中国著名电子元器件独立分销
询价
IXYS/艾赛斯
22+
NA
1120
中国航天工业部战略合作伙伴行业领导者
询价
更多FII30-06D供应商 更新时间2024-5-1 15:00:00