型号：BCV47；Package：SOT23；NPN Silicon Darlington Transistors

文件：528.92 Kbytes 页数：7 Pages

Infineon

英飞凌

型号：FGS15N40L；Electrical Characteristics of IGBT

General Description Insulated Gate Bipolar Transistors(IGBTs) with trench gate structure have superior performance in conductance and switching to planar gate structure and also have wide noise immunity. These devices are well suitable for strobe application Features • High Input Impedance • H

文件：204.72 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

型号：FGS15N40L；High Input Impedance

General Description Insulated Gate Bipolar Transistors(IGBTs) with trench gate structure have superior performance in conductance and switching to planar gate structure and also have wide noise immunity. These devices are well suitable for strobe application Features • High Input Impedance • H

文件：210.2 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

型号：FGS15N40LTF；High Input Impedance

General Description Insulated Gate Bipolar Transistors(IGBTs) with trench gate structure have superior performance in conductance and switching to planar gate structure and also have wide noise immunity. These devices are well suitable for strobe application Features • High Input Impedance • H

文件：210.2 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

型号：FGS；IEC Appliance Inlet C14 with Filter, Front or Rear side Mounting

文件：513.15 Kbytes 页数：4 Pages

SCHURTER

硕特

型号：FGS；IEC Appliance Inlet C14 with Filter, Front or Rear side Mounting

文件：523.039 Kbytes 页数：6 Pages

SCHURTER

硕特

型号：FGS.1F.303.YLM；F - Rugged Push-Pull

文件：118.69 Kbytes 页数：4 Pages

LEMO

雷莫电子

型号：FGS.2F.312.CLM；F - Rugged Push-Pull

文件：156.5 Kbytes 页数：4 Pages

LEMO

雷莫电子

型号：FGS.2F.319.CLM；F - Rugged Push-Pull

文件：94.74 Kbytes 页数：4 Pages

LEMO

雷莫电子

型号：FGS.2F.319.YLM；F - Rugged Push-Pull

文件：96 Kbytes 页数：4 Pages

LEMO

雷莫电子