IGBT - Field Stop, Trench 650 V, 50 A

文件：548.99 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FGH50T65SQD；Package：TO-247-3LD；IGBT - Field Stop, Trench 650 V, 50 A

文件：548.99 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

FGH50T65SQD: 650 V, 50 A Field Stop Trench IGBT

ONSEMI

安森美半导体

IGBT，650V，50A，场截止 4 沟槽

Using novel field stop IGBT technology, Fairchild’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. •Maximum Junction Temperature: TJ =175°C\n•Positive Temperature Co-efficient for Easy Parallel Operating\n•High Current Capability\n•Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 75 A\n•100% of the Parts Tested for ILM\n\n•High Input Impedance\n•Fast Switching\n•Tighten Parameter Distribu;

ONSEMI

安森美半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT TRENCH/FS 650V 100A TO247-3

ONSEMI

安森美半导体