DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FAIRCHILD

仙童半导体

丝印：FGH40N60SMD；Package：TO-247-3；IGBT - Field Stop 600 V, 40 A

Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • Maximum Junction Temperature: TJ

文件：375.39 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

600V, 40A Field Stop IGBT

General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Maximum Junc

文件：357.9 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FAIRCHILD

仙童半导体

600 V、40 A、1.9 V、TO-247场截止 IGBT

飞兆半导体的场截止第二代 IGBT 新系列采用新型场截止 IGBT 技术，为光伏逆变器、UPS、焊机、通讯、ESS 和 PFC 等低导通和开关损耗至关重要的应用提供最佳性能。 •最大结温 TJ=175°C\n•正温度系数，易于并联运行\n•高电流能力\n•低饱和电压： VCE(sat) =1.9V（典型值） IC = 40A 时\n•高输入阻抗\n•快速开关： EOFF =6.5uJ/A\n•紧密的参数分布\n•符合 RoHS 标准;

ONSEMI

安森美半导体

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT FIELD STOP 600V 80A TO247-3

ONSEMI

安森美半导体

600 V、40 A、1.9 V、TO-247场截止 IGBT

飞兆半导体的场截止第二代 IGBT 新系列采用新型场截止 IGBT 技术，为光伏逆变器、UPS、焊机、通讯、ESS 和 PFC 等低导通和开关损耗至关重要的应用提供最佳性能。 •最大结温 TJ =175 °C\n•正温度系数，易于并联运行\n•高电流能力\n•低饱和电压： VCE(sat) =1.9V（典型值） IC = 40A 时\n•高输入阻抗\n•快速开关： EOFF =6.5uJ/A\n•紧密的参数分布\n•符合 RoHS 标准;

ONSEMI

安森美半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 80A 349W TO-247-3

ONSEMI

安森美半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT FIELD STOP 600V 80A TO247-3

ONSEMI

安森美半导体