IGBT，1200V，15A，场截止沟槽

通过采用创新的场截止沟道 IGBT 技术，飞兆半导体新型系列的场截止沟道 IGBT 可为太阳能逆变器、UPS、焊机和 PFC 等硬开关应用提供最佳性能。 •FS 沟道技术，正温度系数\n•高速开关\n•低饱和电压： VCE(sat) =1.8 V @ IC = 15 A\n•ILM\n 部件 100% 检测\n•高输入阻抗\n•符合 RoHS 标准;

ONSEMI

安森美半导体

1200 V, 15 A Field Stop Trench IGBT

General Description Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. Features • FS Trench Technology, Positive Temp

文件：257 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 30A 333W TO247-3

ONSEMI

安森美半导体

Low Loss IGBT in Trench and Fieldstop Technology

Low Loss IGBT in TrenchStop® and Fieldstop technology • Approx. 1.0V reduced VCE(sat) compared to BUP313 • Short circuit withstand time – 10µs • Designed for : - Frequency Converters - Uninterrupted Power Supply • TrenchStop® and Fieldstop technology for 1200 V applicatio

文件：408.96 Kbytes 页数：12 Pages

INFINEON

英飞凌

TrenchStop Series

文件：353.8 Kbytes 页数：12 Pages

INFINEON

英飞凌

IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode

文件：339 Kbytes 页数：14 Pages

INFINEON

英飞凌