丝印：FGD3440G2；Package：TO-252AA；EcoSPARK®2 335mJ, 400V, N-Channel Ignition IGBT

Features - SCIS Energy = 335mJ at TJ = 25oC - Logic Level Gate Drive - Qualified to AEC Q101 - RoHS Compliant Applications - Automotive lgnition Coil Driver Circuits - Coil On Plug Applications

文件：1.26515 Mbytes 页数：9 Pages

ONSEMI

安森美半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 400V 26.9A TO252AA

ONSEMI

安森美半导体

丝印：FGD3440G2；Package：DPAK；EcoSPARK 2 N-Channel Ignition IGBT 335 mJ, 400 V

Features • SCIS Energy = 335 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Application

文件：1.01146 Mbytes 页数：8 Pages

ONSEMI

安森美半导体

IGBT, 400V, 25A, 1.30V, 335mJ, DPAKEcoSPARK® II, N-Channel Ignition

FGD3440G2-F085V • SCIS Energy = 335mJ at TJ = 25℃\n• Logic Level Gate Drive\n• Qualified to AEC Q101\n• RoHS Compliant;

ONSEMI

安森美半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 450V DPAK

ONSEMI

安森美半导体