SiC 二极管，650V，8A，TO-220FP-2

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next gener • Max Junction Temperature 175 °C\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• No Reverse Recovery / No Forward Recovery;

ONSEMI

安森美半导体

Package：TO-220-2 整包；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：650V 8A SIC SBD

ONSEMI

安森美半导体

TREK P0865

APPLICATIONS  Charge accumulation monitoring of the LCD production processes  Monitoring surface potentials in the electrostatic painting process  Research and development in the electrophotographic process  Measuring electrostatic potentials on polymers, rubber, fabrics, and paper

文件：136.17 Kbytes 页数：4 Pages

ADVANCEDENERGY

先进能源工业

N-Channel High Voltage Mode Field Effect Transistor

文件：216.4 Kbytes 页数：4 Pages

NIKOSEM

尼克森

N-Channel High Voltage Mode Field Effect Transistor

文件：204.83 Kbytes 页数：4 Pages

NIKOSEM

尼克森