Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D1, TO-220-2L

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the • Max Junction Temperature\n• Avalanche Rated\n• High Surge Current Capacity\n• Ease of Paralleling\n• Pb-Free, Halogen Free/BFR Free and RoHS Compliant\n;

ONSEMI

安森美半导体

Package：TO-220-2；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SIC DIODE TO220 650V

ONSEMI

安森美半导体

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 30A, 650V, D2, TO-220-2L

Silicon Carbide (SiC) Schottky Diodes use a completely new\ntechnology that provides superior switching performance and\nhigher reliability compared to Silicon. No reverse recovery\ncurrent, temperature independent switching characteristics, and\nexcellent thermal performance sets Silicon Carbide as • Max Junction Temperature 175C\n• Avalanche Rated 144 mJ\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• Ease of Paralleling\n• No Reverse Recovery / No Forward Recovery\n• AEC-Q101 Qualified and PPAP capable;

ONSEMI

安森美半导体

Package：TO-220-2；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SIC DIODE 650V

ONSEMI

安森美半导体