FFSP3065B-F085

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 30A, 650V, D2, TO-220-2L; • Max Junction Temperature 175C\n• Avalanche Rated 144 mJ\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• Ease of Paralleling\n• No Reverse Recovery / No Forward Recovery\n• AEC-Q101 Qualified and PPAP capable\n;

Silicon Carbide (SiC) Schottky Diodes use a completely new\ntechnology that provides superior switching performance and\nhigher reliability compared to Silicon. No reverse recovery\ncurrent, temperature independent switching characteristics, and\nexcellent thermal performance sets Silicon Carbide as the next\ngeneration of power semiconductor. System benefits include\nhighest efficiency, faster operating frequency, increased power\ndensity, reduced EMI, and reduced system size & cost

FFSP3065B-F085

Package：TO-220-2；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SIC DIODE 650V

FFSB3065B-F085

SiliconCarbideSchottkyDiode650V,30A

Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil

FFSB3065B-F085

SiliconCarbideSchottkyDiode

FFSH3065B-F085

SiliconCarbideSchottkyDiode,650V,30A