SiC 二极管，650V，8A，PQFN88

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next gener • Max Junction Temperature 175 °C\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• No Reverse Recovery / No Forward Recovery;

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安森美半导体

Package：4-PowerTSFN；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SBD 650V 8A 4PQFN

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安森美半导体

Silicon Carbide Schottky Diode

文件：224.28 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Silicon Carbide Schottky Diode 650 V, 8 A

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：234.13 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Schottky Barrier Rectifier

FEATURES ·High Surge Current Capacity ·Easy Of Paralleling ·No Reverse Recovery APPLICATIONS ·SMPS ·UPS ·Power Switching Circuits

文件：272.97 Kbytes 页数：2 Pages

ISC

无锡固电