Silicon Carbide (SiC) Schottky Diode – EliteSiC, 15 A, 1200 V, D1, TO-247-3L

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next gener • Max Junction Temperature\n• Tj = 175 °C\n• Avalanche Rated\n• 80 mJ\n•High Surge Current Capacity\n•Positive Temperature Coefficient\n•No Reverse Recovery / No Forward Recovery;

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安森美半导体

丝印：FFSH15120ADN；Package：TO-247-3LD；Silicon Carbide Schottky Diode

文件：298.1 Kbytes 页数：6 Pages

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安森美半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE SIC 1200V 8A TO247

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安森美半导体