丝印：FFSB10120A；Package：D2PAK-3；Silicon Carbide Schottky Diode

文件：185.73 Kbytes 页数：7 Pages

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丝印：FFSB10120A；Package：D2PAK；Silicon Carbide Schottky Diode 1200 V, 10 A

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：316.16 Kbytes 页数：6 Pages

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安森美半导体

丝印：FFSB10120A；Package：D2PAK；Silicon Carbide Schottky Diode

文件：365.7 Kbytes 页数：6 Pages

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安森美半导体

Silicon Carbide Schottky Diode 1200 V, 10 A

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：316.16 Kbytes 页数：6 Pages

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安森美半导体

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D1, D2PAK-2L

Silicon Carbide (SiC) Schottky Diodes use a completely new\ntechnology that provides superior switching performance and higher\nreliability compared to Silicon. No reverse recovery current,\ntemperature independent switching characteristics, and excellent\nthermal performance sets Silicon Carbide as • Max Junction Temperature 175°C\n• Avalanche Rated 200 mJ\n• No Reverse Recovery/No Forward Recovery\n• Ease of Paralleling\n• High Surge Current Capacity\n• Positive Temperature Coefficient;

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安森美半导体

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SBD 10A 120V D2PAK-3

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安森美半导体

汽车碳化硅 (SiC) 肖特基二极管，1200V

Silicon Carbide (SiC) Schottky Diodes use a completely new\ntechnology that provides superior switching performance and higher\nreliability compared to Silicon. No reverse recovery current,\ntemperature independent switching characteristics, and excellent\nthermal performance sets Silicon Carbide as • Max Junction Temperature 175°C\n• AEC−Q101 qualified and PPAP Capable\n• Avalanche Rated 200 mJ\n• No Reverse Recovery/No Forward Recovery\n• Ease of Paralleling\n• High Surge Current Capacity\n• Positive Temperature Coefficient;

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安森美半导体

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：1200V 10A AUTO SIC SBD

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安森美半导体