FFSB10120A中文资料Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D1, D2PAK-2L数据手册ONSEMI规格书

描述 Description

Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.

特性 Features

• Max Junction Temperature 175°C
• Avalanche Rated 200 mJ
• No Reverse Recovery/No Forward Recovery
• Ease of Paralleling
• High Surge Current Capacity
• Positive Temperature Coefficient

简介

FFSB10120A属于分立半导体产品的二极管-整流器-单。由制造生产的FFSB10120A二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。