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FFSB10120A-F085

Silicon Carbide Schottky Diode 1200 V, 10 A

Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FFSB10120A-F085_V01

Silicon Carbide Schottky Diode 1200 V, 10 A

Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FFSB1065A

Silicon Carbide Schottky Diode 650 V, 10 A

Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FFSB1065A_V01

Silicon Carbide Schottky Diode 650 V, 10 A

Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FFSB1065B-F085

Silicon Carbide Schottky Diode 650 V, 10 A

Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FFSB1065B-F085_V01

Silicon Carbide Schottky Diode 650 V, 10 A

Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FFSB1265A

Silicon Carbide Schottky Diode 650 V, 12 A

Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FFSB1265A_V01

Silicon Carbide Schottky Diode 650 V, 12 A

Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FFSB10120A

Silicon Carbide Schottky Diode

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FFSB10120A-F085

Silicon Carbide Schottky Diode

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FFSB1065A

Silicon Carbide Schottky Diode

ONSEMION Semiconductor

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FFSB1065B

Silicon Carbide Schottky Diode

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FFSB1065B-F085

Silicon Carbide Schottky Diode

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FFSB1265A

Silicon Carbide Schottky Diode

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FFSB10120A-F085

包装:管件 封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 类别:分立半导体产品 二极管 - 整流器 - 单 描述:1200V 10A AUTO SIC SBD

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FFSB1065A

包装:卷带(TR) 封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 类别:分立半导体产品 二极管 - 整流器 - 单 描述:DIODE SBD 10A 650V D2PAK-3

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FFSB1065B

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 类别:分立半导体产品 二极管 - 整流器 - 单 描述:650V 10A SIC SBD GEN1.5

ONSEMION Semiconductor

安森美半导体安森美半导体公司

产品属性

  • 产品编号:

    FFSB10120A-F085

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 单

  • 系列:

    Automotive, AEC-Q101

  • 包装:

    管件

  • 二极管类型:

    碳化硅肖特基

  • 电流 - 平均整流 (Io):

    21A

  • 速度:

    无恢复时间 > 500mA(Io)

  • 不同 Vr、F 时电容:

    612pF @ 1V,100kHz

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-263-3,D²Pak(2 引线 + 接片),TO-263AB

  • 供应商器件封装:

    D²PAK(TO-263)

  • 工作温度 - 结:

    -55°C ~ 175°C

  • 描述:

    1200V 10A AUTO SIC SBD

供应商型号品牌批号封装库存备注价格
ON
23+
D2PAK2 (TO-263-2L)
100000
全新原装
询价
ON(安森美)
23+
标准封装
9048
全新原装正品/价格优惠/质量保障
询价
ON/安森美
23+
D2PAK-3
25500
授权代理直销,原厂原装现货,假一罚十,特价销售
询价
ON(安森美)
2112+
TO-263-3
115000
800个/圆盘一级代理专营品牌!原装正品,优势现货,长
询价
ON
21+
NA
3000
进口原装 假一罚十 现货
询价
ON/安森美
标准封装
57218
一级代理原装正品现货期货均可订购
询价
ON/安森美
23+
NA
640
电子元器件供应原装现货. 优质独立分销。原厂核心渠道
询价
ON
2022+
NA
8600
原装正品,欢迎来电咨询!
询价
onsemi
22+
n/a
925
原装正品订货,请确认
询价
ON/安森美
22+
N/A
12245
现货,原厂原装假一罚十!
询价
更多FFSB1供应商 更新时间2024-5-16 14:52:00