丝印：FFs；Package：SOT23；NPN Silicon Darlington Transistors

文件：528.92 Kbytes 页数：7 Pages

INFINEON

英飞凌

丝印：FFSB0665A；Package：D2PAK-3；Silicon Carbide Schottky Diode 650 V, 6 A

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：315.62 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：FFSB0665B；Package：D2PAK2；Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6A, 650 V, D2, D2PAK-2L

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

文件：334.56 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：FFSB0665B；Package：D2PAK；Silicon Carbide Schottky Diode 650 V, 6 A

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

文件：332.3 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：FFSB0865A；Package：D2PAK-3；Silicon Carbide Schottky Diode 650 V, 8 A

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：293.38 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：FFSB0865B；Package：D2PAK2；Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8A, 650 V, D2, D2PAK-2L

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

文件：335.75 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：FFSB0865B；Package：D2PAK；Silicon Carbide Schottky Diode 650 V, 8 A

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

文件：333.21 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：FFSB10120A；Package：D2PAK；Silicon Carbide Schottky Diode 1200 V, 10 A

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：316.16 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：FFSB1065A；Package：D2PAK-3；Silicon Carbide Schottky Diode 650 V, 10 A

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：299.15 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：FFSB1065B；Package：D2PAK-3；Silicon Carbide Schottky Diode 650 V, 10 A

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：331.61 Kbytes 页数：7 Pages

ONSEMI

安森美半导体