FFSH10120ADN-F155芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
FFSH10120ADN-F155	文件：369.58 Kbytes Page：7 Pages	丝印：FFSH10120ADN；Package：TO-247-3LD；Silicon Carbide Schottky Diode 1200 V, 10 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil 文件：369.58 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
FFSH10120ADN-F155	文件：369.58 Kbytes Page：7 Pages	丝印：FFSH10120ADN；Package：TO-247-3LD；Silicon Carbide Schottky Diode 1200 V, 10 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil 文件：369.58 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI

更多FFSH10120ADN供应商更新时间2025-9-21 15:08:00