8A, 600V STEALTHTM II Rectifier

8A, 600V STEALTHTM II Rectifier The FFP08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power sw

文件：281.74 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

8A, 600V STEALTHTM II Rectifier

8A, 600V STEALTHTM II Rectifier The FFP08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power sw

文件：281.74 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

8A，600V，STEALTH™ II 二极管

FFP08S60SN 是代软恢复特性的 STEALTH™ II 代二极管。它采用氮化硅钝化的离子布植式外延平面结构。此器件在开关电源及其他电源开关应用中用作续流或升压二极管。其低存储电荷和超高速软恢复特性可最大程度降低多种电源开关电路中的振铃和电气噪声，由此降低开关晶体管中的功耗。 •Stealth 恢复，Trr = 25 ns（需 IF= 8 A）\n•最大正向电压，VF = 3.4 V（需 TC = 25°C）\n•600 V 反向电压和高可靠性\n•提高了dv/dt处理能力\n•符合RoHS标准;

ONSEMI

安森美半导体

Package：TO-220-2；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 600V 8A TO220-2L

ONSEMI

安森美半导体