FF450R33T3E3

XHP?? module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode

Features •Electricalfeatures -VCES=3300V -ICnom=450A/ICRM=900A -Lowswitchinglosses -HighDCstability -Highshort-circuitcapability -LowVCE,sat -Tvj,op=150°C -Unbeatablerobustness -VCE,satwithpositivetemperaturecoefficient •Mechanicalfeatures -AlSiC

FF450R33T3E3_B5

XHP?? module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode

Features •Electricalfeatures -VCES=3300V -ICnom=450A/ICRM=900A -HighDCstability -Highshort-circuitcapability -Lowswitchinglosses -LowVCE,sat -Tvj,op=150°C -Unbeatablerobustness •Mechanicalfeatures -AlSiCbaseplateforincreasedthermalcyclingcapabil

FF450R33T3E3B5P2BPSA1

Package：模块；包装：散装 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：IHV IHM T XHP 3 3-6 5K

FF450R33T3E3B5P3BPMA1

Package：模块；包装：散装 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：IHV IHM T XHP 3 3-6 5K AG-XHP3K3

FF450R33T3E3B5P3BPSA1

Package：模块；包装：托盘 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：IHV IHM T XHP 3 3-6 5K