-20V P沟道1.5 V PowerTrench®薄型WL-CSP MOSFET

FDZ391P的设计采用飞兆先进的1.5 V PowerTrench工艺和最新“低间距”薄型WLCSP封装工艺，可最大限度地减小PCB空间和RDS(on)。 先进的WLCSP MOSFET彰显了封装技术的突破性进展，使该器件将卓越的传热特性、超薄型封装、低栅极电荷和低rDS(on)融合为一体。 •VGS = -4.5 V，ID = -1 A时，最大RDS(on) = 85mΩ\n•VGS = -3 V，ID = -1 A时，最大RDS(on) = 123mΩ\n•VGS = -3 V，ID = -1 A时，最大RDS(on) = 200mΩ\n•只占用1.5 mm2的PCB面积\n•超薄封装： 安装在PCB上时高度低于0.4 mm\n•符合RoHS标准;

ONSEMI

安森美半导体

P-Channel 1.5 V PowerTrench짰 Thin WL-CSP MOSFET

文件：256.54 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

LM391 Audio Power Driver

文件：236.29 Kbytes 页数：12 Pages

NSC

国半

Silicon Complementary Transistors General Purpose

Description: The NTE390 (NPN) and NTE391 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications. Features: ● 10A Collector Current ● Low Leakage Current: ICEO = 0.7mA @ VCE = 60V ● Excellent DC Gain: hFE = 4

文件：21.05 Kbytes 页数：2 Pages

NTE

LOWPOWER SINGLE VOLTAGE COMPARATORS

Description This device consists of a low-power voltage comparator designed specifically to operate from a single supply over a wide range of voltages. Operation from split power supplies is also possible. This comparator also has a unique characteristic in that the input common-mode voltage ran

文件：44.81 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体