N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These p

文件：89.39 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

N 沟道增强型场效应晶体管，30V，6.5A，35mΩ

这些N沟道增强模式功率场效应晶体管采用飞兆半导体专有的高单元密度DMOS技术生产。 这种密度非常高的工艺是专为最大限度地降低通态电阻并提供卓越开关性能而定制的。 此类产品非常适合低电压、低电流应用，例如笔记本电脑电源管理、电池供电电路和DC电机控制。 •6.5 A，30 V。 RDS(ON) = 0.035 Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V\n•高密度设计可实现极低的RDS(ON)\n•高功率和高电流处理能力，采用广泛使用的表面贴装封装;

ONSEMI

安森美半导体

450V SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR

Summary V(BR)CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use in hi

文件：169.74 Kbytes 页数：6 Pages

ZETEX

500V Silicon NPN high voltage switching transistor

文件：236.93 Kbytes 页数：6 Pages

ZETEX

Silicon NPN High Voltage Switching Transistor

■ Features ● 6V reverse blocking capability ● Low saturation voltage - 90mV @ 50mA ● IC=150mA continuous

文件：44.41 Kbytes 页数：2 Pages

KEXIN

科信电子