FMMT459分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF中文资料

Summary

V(BR)CEV > 500V

V(BR)ECV > 6V

Ic(cont) = 150 mA

Vce(sat) = 70 mV @ 50 mA

描述 Description

This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use in high efficiency Telecom and protected line switching applications.

特性 Features

■ 6V reverse blocking capability

■ Low saturation voltage - 90mV @ 50mA

■ Hfe
50 @ 30 mA

■ IC=150mA continuous

■ SOT23 package with Ptot 625mW

■ Specification can be supplied in other package outlines

Applications

■ Electronic test equipment

■ Offline switching circuits

■ Piezo actuators

■ RCD circuit