N-Channel PowerTrench MOSFET 30V, 15A, 7.0mohm

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

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Fairchild

仙童半导体

N 沟道，PowerTrench® MOSFET，30V，15A，7.0mΩ

此N沟道MOSFET采用飞兆半导体先进的PowerTrench®工艺生产，这一先进工艺是专为最大程度地降低通态电阻而定制的。该器件非常适用于笔记本电脑和便携式电池组中的电源管理和负载开关应用。 •VGS = 10V，ID = 15A时，最大rDS(on) = 7.0 mΩ\n•VGS = 4.5V，ID = 12.6A时，最大rDS(on) = 10 mΩ\n•HBM ESD保护等级，典型值为3.8KV（注3）\n•高性能沟道技术可实现极低的RDS(on)\n•高功率和高电流处理能力\n•符合RoHS标准;

ONSEMI

安森美半导体

CVBS

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ETCList of Unclassifed Manufacturers

未分类制造商

Dual Channel 2.5A Low Dropout Regulator

DESCRIPTION The LX8817 is a dual channel positive-voltage linear regulator. This dual regulator has one fixed output coupled with an adjustable output. Each channel features low-dropout and high accuracy. The LX8817 utilizes dual inputs that can be used as separate sources for the control and p

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Microsemi

美高森美

JTAG (IEEE 1149.1) Protocol

文件：8.37876 Mbytes 页数：8 Pages

KEYSIGHT

是德科技