DIODE:Small Signal Schottky

分立

First Silicon

丝印：4T；Package：SOD-323；Silicon Hot?밅arrier Diodes

文件：184.64 Kbytes 页数：3 Pages

FS

Digital FET , N-Channel

General Description This N-Channel logic level enhancement mode field effect transistor is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for

文件：97.95 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

N-Channel MOSFET

文件：1.82926 Mbytes 页数：4 Pages

KEXIN

科信电子

Load Switch for Portable Applications

FEATURES VDS (V) = 20V ID = 6 A (VGS = 10V) RDS(ON)

文件：390.31 Kbytes 页数：7 Pages

UMW

友台半导体