FDR301

Marking：4T；Package：SOT-23；Silicon Hot?밅arrier Diodes Schottky Barrier Diodes

FDR301U

Marking：4T；Package：SOD-323；Silicon Hot?밅arrier Diodes

FDV301N

DigitalFET,N-Channel

GeneralDescription ThisN-ChannellogiclevelenhancementmodefieldeffecttransistorisproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeciallyfor

FDV301N

N-ChannelMOSFET

FDV301N

LoadSwitchforPortableApplications

FEATURES VDS(V)=20V ID=6A(VGS=10V) RDS(ON)

FDV301N

MOSFET

FEATURES VDS(V)=20V ID=6A(VGS=10V) RDS(ON)

FDV301N-NL

N-Channel20V(D-S)MOSFET

FDY301NZ

SingleN-Channel2.5VSpecifiedPowerTrenchMOSFET

FFM301

Fastrecoverytype

3.0ASurfaceMountFastRecoveryRectifiers-50-1000V Features •Batchprocessdesign,excellentpowerdissipationoffersbetterreverseleakagecurrentandthermalresistance. •Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. •Highcurrentcapability. •Fastswitchi

FFM301

SurfaceMountFastRecoveryRectifiers

Features: *PlasticpackagehasUnderwritersLaboratory *FlammabilityClassication94V-OUtilizingFlame *RetardantEpoxyMoldingCompound. *Forsurfacemountedapplications. *ExceedsenvironmentalstandardsofMIL-S-19500/228 *Lowleakagecurrent.