丝印：FDPF8D5N10C；Package：TO-220F；N-Channel Shielded Gate PowerTrench짰 MOSFET 100 V, 76 A, 8.5 m廓

文件：1.02235 Mbytes 页数：8 Pages

ONSEMI

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isc N-Channel MOSFET Transistor

文件：293.31 Kbytes 页数：2 Pages

ISC

无锡固电

N 沟道，屏蔽门极，PowerTrench® MOSFET，100V，76A，8.5mΩ

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. • Max RDS(on) = 8.5 mΩ at VGS = 10 V, ID = 76 A\n• Power Density & Shielded GatePower Density & Shielded GateHigh efficiency / High performance\n• High Performance Trench Technology for Extremely Low RDS(on)\n• High power density with Shielded gate technology\n• Extremely Low Reverse Recovery Charge;

ONSEMI

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100 V N-Channel MOSFET

Features (VGS = 10V) VDS (V) =100V ID = 76 A RDS(ON)

文件：822.39 Kbytes 页数：7 Pages

UMW

友台半导体

100 V N-Channel MOSFET

Features (VGS = 10V) VDS (V) =100V ID = 76 A RDS(ON)

文件：822.39 Kbytes 页数：7 Pages

UMW

友台半导体

N-Channel Shielded Gate PowerTrench짰 MOSFET 100 V, 76 A, 8.5 m廓

文件：1.02235 Mbytes 页数：8 Pages

ONSEMI

安森美半导体