丝印：FDPF4D5N10C；Package：TO-220F；N-Channel Shielded Gate PowerTrench짰 MOSFET 100 V, 128 A, 4.5 m廓

文件：1.02386 Mbytes 页数：8 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

文件：243.95 Kbytes 页数：2 Pages

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无锡固电

N 沟道，屏蔽门极，PowerTrench® MOSFET，100V，128A，4.5mΩ

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. • Max RDS(on) = 4.5 mΩ at VGS = 10 V, ID = 128 A\n• Power Density & Shielded GatePower Density & Shielded GateHigh efficiency / High performance\n• High Performance Trench Technology for Extremely Low RDS(on)\n• High power density with Shielded gate technology\n• Extremely Low Reverse Recovery Charg;

ONSEMI

安森美半导体

N-Channel Shielded Gate PowerTrench짰 MOSFET 100 V, 128 A, 4.5 m廓

文件：1.02386 Mbytes 页数：8 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

文件：301.25 Kbytes 页数：2 Pages

ISC

无锡固电