isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=77A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.1mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：323.71 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：FDPF041N06BL1；Package：TO-220F；MOSFET – N-Channel, POWERTRENCH 60 V, 77 A, 4.1 m

Description This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance. Features • RDS(on) = 3.5 m (Typ.)@ VGS = 10 V, ID = 77 A • Low FOM RDS(on)*QG

文件：388.87 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

N 沟道 PowerTrench® MOSFET 60 V, 77 A, 4.1 mΩ

此 N 沟道 MOSFET 采用 Fairchild®先进的 PowerTrench® 工艺生产，这一先进工艺专为最大限度地降低导通电阻并保持卓越开关性能而定制。 •RDS(on) = 3.5 mΩ（典型值） @ VGS = 10 V, ID = 77 A\n•低 FOM RDS(on)*QG\n•低反向恢复电荷，Qrr\n•反向恢复软体二极管\n•使能高效同步整流\n•快速开关速度\n•100% 经过 UIL 测试\n•符合 RoHS 标准;

ONSEMI

安森美半导体

N-Channel PowerTrench® MOSFET 60 V, 77 A, 4.1 mΩ

This N-Channel MOSFET is produced using an advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. •RDS(on) = 3.5 mΩ ( Typ.) @ VGS = 10 V, ID = 77 A\n• Low FOM RDS(on)*QG\n• Low FOM RDS(on)*QG\n• Low Reverse Recovery Charge, Qrr\n• Low Reverse Recovery Charge, Qrr\n• Soft Reverse Recovery Body Diode\n• Soft Reverse Recovery Body Diode\n• Enables Highly Efficiency in Synchronous Rectification\n• E;

ONSEMI

安森美半导体