FDPF041N06BL1

N 沟道 PowerTrench® MOSFET 60 V, 77 A, 4.1 mΩ; •RDS(on) = 3.5 mΩ（典型值） @ VGS = 10 V, ID = 77 A\n•低 FOM RDS(on)*QG\n•低反向恢复电荷，Qrr\n•反向恢复软体二极管\n•使能高效同步整流\n•快速开关速度\n•100% 经过 UIL 测试\n•符合 RoHS 标准\n;

此 N 沟道 MOSFET 采用 Fairchild®先进的 PowerTrench® 工艺生产，这一先进工艺专为最大限度地降低导通电阻并保持卓越开关性能而定制。

FDPF041N06BL1

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=77A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.1mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

FDPF041N06BL1-F154

丝印：FDPF041N06BL1；Package：TO-220F；MOSFET – N-Channel, POWERTRENCH 60 V, 77 A, 4.1 m

Description ThisN−ChannelMOSFETisproducedusingONSemiconductor’s advancedPOWERTRENCHprocessthathasbeentailoredto minimizetheon−stateresistancewhilemaintainingsuperiorswitching performance. Features •RDS(on)=3.5m(Typ.)@VGS=10V,ID=77A •LowFOMRDS(on)*QG

FDPF041N06BL1-F154

N-Channel PowerTrench® MOSFET 60 V, 77 A, 4.1 mΩ; •RDS(on) = 3.5 mΩ ( Typ.) @ VGS = 10 V, ID = 77 A\n• Low FOM RDS(on)*QG\n• Low FOM RDS(on)*QG\n• Low Reverse Recovery Charge, Qrr\n• Low Reverse Recovery Charge, Qrr\n• Soft Reverse Recovery Body Diode\n• Soft Reverse Recovery Body Diode\n• Enables Highly Efficiency in Synchronous Rectification\n• Enables Highly Efficiency in Synchronous Rectification\n• Fast Switching Speed\n• Fast Switching Speed\n•100% UIL Tested\n•RoHS Compliant\n;

This N-Channel MOSFET is produced using an advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

FDPF10N60NZ

FAIRCHILD/仙童
TO-220F

FAIRCHILD/仙童