25V，不对称双 N 沟道，PowerTrench® Power Clip MOSFET

该器件在双封装中包括两个专用 N 沟道 MOSFET。该开关节点通过内部连接，能够为同步降压转换器提供简单的布局和布线。控制SyncFETTM(Q1)和同步MOSFET(Q2)设计用于提供最佳电源效率。 • Q1：N 沟道\n• 最大值 rDS(on) = 3.8 mΩ（VGS = 10 V, ID = 20 A）\n• 最大值 rDS(on) = 4.7 mΩ（VGS = 4.5 V, ID = 18 A）Q2：N 沟道\n• 最大值 rDS(on) = 1.4 mΩ（VGS = 10 V, ID = 35 A）\n• 最大值 rDS(on) = 1.7 mΩ（VGS = 4.5 V, ID = 32 A）;

ONSEMI

安森美半导体

丝印：05OD；Package：PQFN8；MOSFET - Dual N?륝hannel, Asymmetric, POWERTRENCH Power Clip 25 V

文件：353.96 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

N-Ch 80V Fast Switching MOSFETs

Description The FKBA8016 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBA8016 meet the RoHS and Green Product requirement, 100 EAS guaranteed with full function reliability approve

文件：658.75 Kbytes 页数：4 Pages

FETEK

台湾东沅

N-ch 75V Fast Switching MOSFETs

Description The FKCE8016 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKCE8016 meet the RoHS and Green Product requirement, 100 EAS guaranteed with full function reliability approve

文件：737.92 Kbytes 页数：4 Pages

FETEK

台湾东沅

N-ch 75V Fast Switching MOSFETs

Description The FKD8016 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKD8016 meet the RoHS and Green Product requirement, 100 EAS guaranteed with full function reliability approved.

文件：733.5 Kbytes 页数：4 Pages

FETEK

台湾东沅