15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET

Features • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Reduced r DS(ON) • Reduced Miller Capacitance and Low Input Capacitance • Improved Switching Speed with Low EMI • 175°C Rated Junction Temperature Applications

文件：194.94 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =15A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：331.8 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET N-CH 500V 15A TO-220AB

ONSEMI

安森美半导体

N-Channel SMPS Power MOSFET

Features ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness ● Reduced rDS(ON) ● Reduced Miller Capacitance and Low Input Capacitance ● Improved Switching Speed with Low EMI

文件：50.18 Kbytes 页数：2 Pages

KEXIN

科信电子

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES • VDSS(Min.)= 500V, ID= 15A • Drain-Source ON Res

文件：69.45 Kbytes 页数：6 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

POWER FIELD EFFECT TRANSISTOR

TMOS POWER FETs 15 AMPERES rDS(on) = 0.4 OHM 450 and 500 VOLTS

文件：196.31 Kbytes 页数：5 Pages

MOTOROLA

摩托罗拉