Single P-Channel PowerTrenchTM MOSFET

General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well sui

文件：231.67 Kbytes 页数：8 Pages

Fairchild

仙童半导体

Single P-Channel MOSFET

Features Low gate charge (6.2 nC typical) High performance trench technology for extremely low RDS(ON) . High power version of industry Standard SOT-23 package. higher power handling capability. VDS (V) = -30V D= -2A (VGS=10V) RDS(ON)

文件：376.95 Kbytes 页数：5 Pages

UMW

友台半导体

Single P-Channel PowerTrenchTM MOSFET

ONSEMI

安森美半导体

丝印：360；Package：SOT-23；Single P-Channel MOSFET

Features Low gate charge (6.2 nC typical) High performance trench technology for extremely low RDS(ON) . High power version of industry Standard SOT-23 package. higher power handling capability. VDS (V) = -30V D= -2A (VGS=10V) RDS(ON)

文件：376.95 Kbytes 页数：5 Pages

UMW

友台半导体

丝印：360；Package：SOT-23；P-Channel 2.5 V (D-S) MOSFET

General Description These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features Low gate charge (6.2 nC typical) High performance trench technology for extremely low RDS(ON) . High power version of i

文件：618.69 Kbytes 页数：5 Pages

EVVOSEMI

翊欧

Single P-Channel PowerTrenchTM MOSFET

General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well sui

文件：231.67 Kbytes 页数：8 Pages

Fairchild

仙童半导体

丝印：360；Package：SOT-23；Single P-Channel, PowerTrench MOSFET

文件：259.11 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

PowerTrench MOSFET，单 P 沟道

此P沟道逻辑电平MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低导通阻抗并保持低栅极电荷以获得卓越开关性能而定制的。 这些器件非常适合需要线路内低功率损耗和快速开关的低电压和电池供电应用。 •-2 A，-30 V\n•RDS(on) = 80 mΩ @ VGS = -10 V\n•RDS(on) = 125 mΩ @ VGS = -4.5 V\n•低栅极电荷（6.2nC，典型值）\n•高性能沟道技术可实现极低的RDS(ON)\n•高功率版本的工业标准SOT-23封装。 相同的SOT-23引脚，可将功率处理能力提高30%。;

ONSEMI

安森美半导体