FDN360P

丝印：360；Package：SOT-23；Single P-Channel MOSFET

Features Lowgatecharge(6.2nCtypical) HighperformancetrenchtechnologyforextremelylowRDS(ON). HighpowerversionofindustryStandardSOT-23package. higherpowerhandlingcapability. VDS(V)=-30V D=-2A(VGS=10V) RDS(ON)

FDN360P

丝印：360；Package：SOT-23；P-Channel 2.5 V (D-S) MOSFET

GeneralDescription Thesedevicesarewellsuitedforlowvoltageand batterypoweredapplicationswherelowin-linepower lossandfastswitchingarerequired. Features Lowgatecharge(6.2nCtypical) HighperformancetrenchtechnologyforextremelylowRDS(ON). Highpowerversionofi

FDN360P

PowerTrench MOSFET，单 P 沟道; •-2 A，-30 V\n•RDS(on) = 80 mΩ @ VGS = -10 V\n•RDS(on) = 125 mΩ @ VGS = -4.5 V\n•低栅极电荷（6.2nC，典型值）\n•高性能沟道技术可实现极低的RDS(ON)\n•高功率版本的工业标准SOT-23封装。 相同的SOT-23引脚，可将功率处理能力提高30%。\n;

此P沟道逻辑电平MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低导通阻抗并保持低栅极电荷以获得卓越开关性能而定制的。 这些器件非常适合需要线路内低功率损耗和快速开关的低电压和电池供电应用。

FDN360P

Single P-Channel PowerTrenchTM MOSFET

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductoradvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance.Thesedevicesarewellsui

FDN360P

丝印：360；Package：SOT-23；Single P-Channel, PowerTrench MOSFET