N-Channel 30 V (D-S) MOSFET

Features VDS (V) = 30V RDS(ON)

文件：423.52 Kbytes 页数：6 Pages

UMW

友台半导体

N-Channel 30 V (D-S) MOSFET

General Description This N-Channel Logic Level MOSFET is produced using process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line

文件：331.27 Kbytes 页数：6 Pages

EVVOSEMI

翊欧

丝印：359B；Package：SOT-23；N-Channel 30 V (D-S) MOSFET

Features VDS (V) = 30V RDS(ON)

文件：423.52 Kbytes 页数：6 Pages

UMW

友台半导体

丝印：359B；Package：SOT-23；N-Channel 30 V (D-S) MOSFET

General Description This N-Channel Logic Level MOSFET is produced using process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line

文件：331.27 Kbytes 页数：6 Pages

EVVOSEMI

翊欧

N-Channel Logic Level PowerTrench TM MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild’s Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and ba

文件：96.5 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

N-Channel Logic Level PowerTrenchTM MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild’s Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and ba

文件：106.63 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

N-Channel Logic Level PowerTrenchTM MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild’s Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and ba

文件：106.63 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

N 沟道逻辑电平 PowerTrench® MOSFET 30V，2.7A，46mΩ

此N沟道逻辑电平MOSFET采用飞兆€™半导体€™先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。这些器件非常适合需要线路内低功率损耗和快速开关的低电压和电池供电应用。 •2.7 A，30 V。\n•RDS(ON)= 0.046 Ω @ VGS = 10 V\n•RDS(ON) = 0.060 Ω @ VGS = 4.5 V\n•开关速度非常快。\n•低栅极电荷（5nC典型值）\n•高性能版本的工业标准SOT-23封装。 相同的SOT-23插脚引线高出30%的功率处理能力。;

ONSEMI

安森美半导体