P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features · –1.6 A, –20 V. RDS(ON) = 115 mW @ VGS = –4.5 V RDS(ON) = 155 mW @ VGS =

文件：85.19 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

P-Channel 20-V(D-S) MOSFET

General FEATURE ●TrenchFET Power MOSFET ●Lead free product is acquired ●Surface mount package APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter

文件：2.74912 Mbytes 页数：5 Pages

TUOFENG

拓锋半导体

LV POWER MOSFET (P-CH)

BGSEMI

P-Channel Logic Level Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

丝印：338；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter

文件：572.58 Kbytes 页数：2 Pages

EVVOSEMI

翊欧

SOT-23 Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET

文件：601.84 Kbytes 页数：2 Pages

UMW

友台半导体

P-Channel 20-V(D-S) MOSFET

Application ● Load/Power Switching ● Interfacing Switching ● Logic Level Shift

文件：1.7249 Mbytes 页数：3 Pages

TECHPUBLIC

台舟电子

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features · –1.6 A, –20 V. RDS(ON) = 115 mW @ VGS = –4.5 V RDS(ON) = 155 mW @ VGS =

文件：85.19 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

20 V P-Channel Enhancement Mode MOSFET

VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-1.6A= 115mΩ RDS(ON), Vgs@-2.5V, Ids@-1.3A= 155mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance

文件：1.91559 Mbytes 页数：4 Pages

HTSEMI

金誉半导体

P-Channel 20-V (D-S) MOSFET

文件：1.039819 Mbytes 页数：9 Pages

VBSEMI

微碧半导体