N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particular

文件：270.42 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

丝印：337；Package：SOT-23；N-Channel 30 V (D-S) MOSFET

Features High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. VDS (V) = 30V D= 2.2A (VGS=4.5V) RDS(ON)

文件：419.81 Kbytes 页数：5 Pages

UMW

友台半导体

N-Channel MOSFET

Features VDS (V) =30 V ID = 2.2 A RDS(ON) = 0.065Ω @ VGS = 4.5 V RDS(ON) = 0.082Ω @ VGS = 2.5 V

文件：343.24 Kbytes 页数：5 Pages

EVVOSEMI

翊欧

Contains all support circuitry needed for the ADS1146/ADS1246

文件：2.33022 Mbytes 页数：27 Pages

TI

德州仪器

Contains all support circuitry needed for the ADS1148/ADS1248

文件：1.83652 Mbytes 页数：34 Pages

TI

德州仪器

N-Channel 30-V (D-S) MOSFET

文件：1.85533 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

30V N-Channel MOSFET

Plingsemic

鹏领半导体

30V N MOSFET

JGSEMI

金锆半导体

场效应管

HXY MOSFET

华轩阳电子