337

型号：FDN337N；Package：SOT-23；N-Channel 30 V (D-S) MOSFET

Features HighdensitycelldesignforextremelylowRDS(ON). Exceptionalon-resistanceandmaximumDCcurrentcapability. VDS(V)=30V D=2.2A(VGS=4.5V) RDS(ON)

337B

型号：1SMB5337；Package：DO-214AA；SURFACE MOUNT SILICON ZENER DIODES

FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •PlasticpackagehasUnderwritersLaboratoryFlammability Classification94V-O •Pbfreeproductareavailable:99Sn

337B

型号：1SMB5337B；Package：DO-214AA；ZENER DIODE

Features ·GlassPassivatedDieConstruction ·5.0WPowerDissipation ·3.3V–200VNominalZenerVoltage ·5StandardVzTolerance ·LowInductance ·ForUseinVoltageRegulatororReference ·PlasticCaseMaterialhasULFlammability ClassificationRating94V-0

337B

型号：1SMB5337B；Package：SMB；5.0W SURFACE MOUNT ZENER DIODE

GlassPassivatedDieConstruction 5.0WPowerDissipation 3.3V–200VNominalZenerVoltage 5StandardVzTolerance LowInductance ForUseinVoltageRegulatororReference PlasticCaseMaterialhasULFlammability ClassificationRating94V-0

337B

型号：1SMC5337B；Package：SMC；5.0W SURFACE MOUNT ZENER DIODE

GlassPassivatedDieConstruction 5.0WPowerDissipation 3.3V–200VNominalZenerVoltage 5StandardVzTolerance LowInductance ForUseinVoltageRegulatororReference PlasticCaseMaterialhasULFlammability ClassificationRating94V-0

337A

型号：RS31337AR；Package：QFN-10；2.95V-16V 5.5A Ture Reverse Current Blocking eFuse with Input Reverse Polarity Protection

Features •Wideinputvoltagerange:2.95Vo16V •Integratedback-to-backFETswith23mΩon resistance •Fastover-voltageprotection -OVCSEL:Overvoltageclampwithpin selectablethreshold(3.89V,5.76V, 13.88V) -OVLO:Adjustableovervoltagelockout •Overcurrentprotectionwithload

337B

型号：RS31337BR；Package：QFN-10；2.95V-16V 5.5A Ture Reverse Current Blocking eFuse with Input Reverse Polarity Protection

Features •Wideinputvoltagerange:2.95Vo16V •Integratedback-to-backFETswith23mΩon resistance •Fastover-voltageprotection -OVCSEL:Overvoltageclampwithpin selectablethreshold(3.89V,5.76V, 13.88V) -OVLO:Adjustableovervoltagelockout •Overcurrentprotectionwithload

337B

型号：SMB5337B；Package：DO-214AA；SILICON ZENER DIODES

Features Lowleakagecurrent Highreliability Highpeakreversepowerdissipation CompleteVoltageRange3.3to200Volts

3374N

型号：SP3374NUTG；Package：DFN3020-10；4-Line TV S for Ethernet Interfaces

Features Ultralowleakage:nAlevel Operatingvoltage:3.3V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(Lighning)40A(8/20μs) RoHSCompliant

3374N

型号：TPRCLAMP3374N；Package：DFN3020-10；Low Capacitance Array for ESD Protection Diode

Features *Lowoperatingvoltage:33V *Ultralowcapacitance:SpF(Max) *Ultralowleakage:nAlevel *Lowclampingvoltage *Complieswithfollowingstandards: *~[EC61000-4-2(ESD)immunitytest Airdischarge:£30kV Contactdischarge:+30kV *—IEC61000-4-(Lightning)40A(8/20ps)